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SST25VF064C-80-4I-S3AE 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST25VF064C-80-4I-S3AE 데이터시트(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 31 page ©2010 Silicon Storage Technology, Inc. S71392-04-000 04/10 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet FEATURES: • Single Voltage Read and Write Operations –2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • Dual Input/Output Support – Fast-Read Dual-Output Instruction – Fast-Read Dual I/O Instruction • High Speed Clock Frequency – 80 MHz for High-Speed Read (0BH) – 75 MHz for Fast-Read Dual-Output (3BH) – 50 MHz for Fast-Read Dual I/O (BBH) – 33 MHz for Read Instruction (03H) • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Read Current: 12 mA (typical @ 80 MHz) for single-bit read) – Active Read Current: 14 mA (typical @ 75MHz) for dual-bit read) – Standby Current: 5 µA (typical) • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks • Fast Erase – Chip-Erase Time: 35 ms (typical) – Sector-/Block-Erase Time: 18 ms (typical) • Page-Program – 256 Bytes per page – Single and Dual Input support – Fast Page-Program time in 1.5 ms (typical) • End-of-Write Detection – Software polling the BUSY bit in Status Register • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register • Software Write Protection – Write protection through Block-Protection bits in sta- tus register • Security ID – One-Time Programmable (OTP) 256 bit, Secure ID - 64 bit Unique, Factory Pre-Programmed identifier - 192 bit User-Programmable • Temperature Range – Commercial = 0°C to +70°C – Industrial: -40°C to +85°C • Packages Available – 16-lead SOIC (300 mils) – 8-contact WSON (6mm x 8mm) – 8-lead SOIC (200 mils) • All devices are RoHS compliant PRODUCT DESCRIPTION The SST 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SST25VF064C SPI serial flash memory is manufactured with SST proprietary, high-perfor- mance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reli- ability and manufacturability compared with alternate approaches. The SST25VF064C significantly improves performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power sup- ply of 2.7-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technolo- gies. The SST25VF064C device is offered in 16-lead SOIC (300 mils), 8-contact WSON (6mm x 8mm), and 8-lead SOIC (200 mils) packages. See Figure 2 for pin assignments. 64 Mbit SPI Serial Dual I/O Flash SST25VF064C SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory |
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