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SST39WF1601-70-4I-MBKE 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc

부품명 SST39WF1601-70-4I-MBKE
상세설명  16 Mbit (x16) Multi-Purpose Flash Plus
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제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

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Data Sheet
©2009 Silicon Storage Technology, Inc.
S71297-05-000
11/09
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
FEATURES:
Organized as 1M x16
Single Voltage Read and Write Operations
– 1.65-1.95V
Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 5 µA (typical)
– Auto Low Power Mode: 5 µA (typical)
Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39WF1602
– Bottom Block-Protection (bottom 32 KWord)
for SST39WF1601
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
– SST: 128 bits; User: 128 bits
Fast Read Access Time:
– 70 ns
Latched Address and Data
Fast Erase and Word-Program:
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 µs (typical)
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bits
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pin Assignments and
Command Sets
Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (5mm x 6mm)
– 48-ball WFBGA (4mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39WF1601/1602 devices are 1M x16 CMOS
Multi-Purpose Flash Plus (MPF+) manufactured with
SST’s proprietary, high-performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39WF1601/
1602 write (Program or Erase) with a 1.65-1.95V power
supply. These devices conform to JEDEC standard pin
assignments for x16 memories.
Featuring
high
performance
Word-Program,
the
SST39WF1601/1602 devices provide a typical Word-Pro-
gram time of 28 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware
and
Software
Data
Protection
schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
The SST39WF1601/1602 devices are suited for applica-
tions that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than
alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super-
Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
technologies. These devices also improve flexibility while
lowering the cost for program, data, and configuration stor-
age applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
SST39WF160x2.7V 16Mb (x16) MPF+ memories


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