전자부품 데이터시트 검색엔진 |
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SST25VF040B-50-4C-QAE 데이터시트(PDF) 11 Page - Silicon Storage Technology, Inc |
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SST25VF040B-50-4C-QAE 데이터시트(HTML) 11 Page - Silicon Storage Technology, Inc |
11 / 33 page Data Sheet 4 Mbit SPI Serial Flash SST25VF040B 11 ©2009 Silicon Storage Technology, Inc. S71295-05-000 10/09 Byte-Program The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction applied to a pro- tected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Byte-Program instruction. The Byte- Program instruction is initiated by executing an 8-bit com- mand, 02H, followed by address bits [A23-A0]. Following the address, the data is input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBP for the completion of the internal self-timed Byte-Program operation. See Figure 7 for the Byte-Program sequence. FIGURE 7: Byte-Program Sequence 1295 ByteProg.0 CE# SO SI SCK ADD. 01 2 3 4 5 6 7 8 ADD. ADD. DIN 02 HIGH IMPEDANCE 15 16 23 24 31 32 39 MODE 0 MODE 3 MSB MSB MSB LSB |
유사한 부품 번호 - SST25VF040B-50-4C-QAE |
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유사한 설명 - SST25VF040B-50-4C-QAE |
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