IRF7Y1405CM datasheet(1/7 Pages) IRF

부품명	IRF7Y1405CM

상세설명	HEXFET짰 POWER MOSFET THRU-HOLE (TO-257AA)

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

18*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

18*

IDM

Pulsed Drain Current ➀

72

PD @ TC = 25°C

Max. Power Dissipation

100

W

Linear Derating Factor

0.8

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

308

mJ

IAR

Avalanche Current ➀

18

A

EAR

Repetitive Avalanche Energy ➀

10

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

1.8

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10s)

Weight

4.3 (Typical)

g

oC

A

05/31/02

www.irf.com

1

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF7Y1405CM

55V

0.0153

Ω 18A*

For footnotes refer to the last page

HEXFET® POWER MOSFET

IRF7Y1405CM

THRU-HOLE (TO-257AA)

55V, N-CHANNEL

Seventh Generation HEXFET® power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Light Weight

TO-257AA

* Current is limited by package

PD - 94449

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