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ISL1219IUZ 데이터시트(PDF) 3 Page - Intersil Corporation |
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ISL1219IUZ 데이터시트(HTML) 3 Page - Intersil Corporation |
3 / 24 page 3 FN6314.1 August 14, 2006 Absolute Maximum Ratings Thermal Information Voltage on VDD, VBAT, SCL, SDA, and IRQ/FOUT Pins (respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V Voltage on X1 and X2 Pins (respect to ground) . . . . . . . . . . . . -0.5V to VDD + 0.5 (VDD Mode) -0.5V to VBAT + 0.5 (VBAT Mode) Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . . 300°C ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . . . .>2kV ESD Rating (Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . .>175V Thermal Resistance (Typical, Note 1) θJA (°C/W) 10 Ld MSOP Package . . . . . . . . . . . . . . . . . . . . . . . 120 Moisture Sensitivity (see Technical Brief TB363). . . . . . . . . . Level 2 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. DC Operating Characteristics – RTC Test Conditions: VDD = +2.7 to +5.5V, Temperature = -40°C to +85°C, unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN TYP (Note 5) MAX UNITS NOTES VDD Main Power Supply 2.7 5.5 V VBAT Battery Supply Voltage 1.8 5.5 V IDD1 Supply Current VDD = 5V 2 6 µA 2, 3 VDD = 3V 1.2 4 µA IDD2 Supply Current With I2C Active VDD = 5V 40 120 µA 2, 3 IDD3 Supply Current (Low Power Mode) VDD = 5V, LPMODE = 1 1.4 5 µA 2, 8 IBAT Battery Supply Current VBAT = 3V 400 950 nA 2 IBATLKG Battery Input Leakage VDD = 5.5V, VBAT = 1.8V 100 nA ILI Input Leakage Current on SCL 100 nA ILO I/O Leakage Current on SDA 100 nA VTRIP VBAT Mode Threshold 1.6 2.2 2.64 V VTRIPHYS VTRIP Hysteresis 10 35 60 mV VBATHYS VBAT Hysteresis 10 50 100 mV EVIN VIL -0.3 0.3 x VDD V VIH 0.7 x VDD VDD + 0.3 V Hysteresis 0.05 x VDD V IEVPU EVIN Pull-up Current VSUP = 3V 1.5 µA 6 IRQ/FOUT and EVDET VOL Output Low Voltage VDD = 5V, IOL = 3mA 0.4 V VDD = 2.7V, IOL = 1mA 0.4 V ILO Output Leakage Current VDD = 5.5V VOUT = 5.5V 100 400 nA ISL1219 |
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