ISL1219IUZ datasheet(3/24 Pages) INTERSIL

부품명	ISL1219IUZ

상세설명	Low Power RTC with Battery Backed SRAM and Event Detection

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제조업체	INTERSIL [Intersil Corporation]

홈페이지	http://www.intersil.com/cda/home

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FN6314.1

August 14, 2006

Absolute Maximum Ratings

Thermal Information

Voltage on VDD, VBAT, SCL, SDA, and IRQ/FOUT Pins

(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V

Voltage on X1 and X2 Pins

(respect to ground) . . . . . . . . . . . . -0.5V to VDD + 0.5 (VDD Mode)

-0.5V to VBAT + 0.5 (VBAT Mode)

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . . 300°C

ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . . . .>2kV

ESD Rating (Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . .>175V

Thermal Resistance (Typical, Note 1)

θJA (°C/W)

10 Ld MSOP Package . . . . . . . . . . . . . . . . . . . . . . .

120

Moisture Sensitivity (see Technical Brief TB363). . . . . . . . . . Level 2

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1.

θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

DC Operating Characteristics – RTC Test Conditions: VDD = +2.7 to +5.5V, Temperature = -40°C to +85°C, unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

(Note 5)

MAX

UNITS

NOTES

VDD

Main Power Supply

2.7

5.5

V

VBAT

Battery Supply Voltage

1.8

5.5

V

IDD1

Supply Current

VDD = 5V

2

6

µA

2, 3

VDD = 3V

1.2

4

µA

IDD2

Supply Current With I2C Active

VDD = 5V

40

120

µA

2, 3

IDD3

Supply Current (Low Power Mode)

VDD = 5V, LPMODE = 1

1.4

5

µA

2, 8

IBAT

Battery Supply Current

VBAT = 3V

400

950

nA

2

IBATLKG

Battery Input Leakage

VDD = 5.5V, VBAT = 1.8V

100

nA

ILI

Input Leakage Current on SCL

100

nA

ILO

I/O Leakage Current on SDA

100

nA

VTRIP

VBAT Mode Threshold

1.6

2.2

2.64

V

VTRIPHYS

VTRIP Hysteresis

10

35

60

mV

VBATHYS

VBAT Hysteresis

10

50

100

mV

EVIN

VIL

-0.3

0.3 x

VDD

V

VIH

0.7 x

VDD

VDD +

0.3

V

Hysteresis

0.05 x

VDD

V

IEVPU

EVIN Pull-up Current

VSUP = 3V

1.5

µA

6

IRQ/FOUT and EVDET

VOL

Output Low Voltage

VDD = 5V, IOL = 3mA

0.4

V

VDD = 2.7V, IOL = 1mA

0.4

V

ILO

Output Leakage Current

VDD = 5.5V

VOUT = 5.5V

100

400

nA

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