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LM3445 데이터시트(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LM3445
상세설명  Triac Dimmable Offline LED Driver
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3445 데이터시트(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
BLDR to GND
-0.3V to +17V
V
CC, GATE, FLTR1 to GND
-0.3V to +14V
ISNS to GND
-0.3V to +2.5V
ASNS, DIM, FLTR2, COFF to
GND
-0.3V to +7.0V
COFF Input Current
100mA
Continuous Power Dissipation
(Note 2)
Internally Limited
ESD Susceptibility
HBM (Note 3)
2 kV
Junction Temperature (T
J-MAX)
150°C
Storage Temperature Range
-65°C to +150°C
Maximum Lead Temp.
Range (Soldering)
260°C
Operating Conditions
V
CC
8.0V to 12V
Junction Temperature
−40°C to +125°C
Electrical Characteristics Limits in standard type face are for T
J = 25°C and those with boldface type apply
over the full Operating Temperature Range ( T
J = −40°C to +125°C). Minimum and Maximum limits are guaranteed through test,
design, or statistical correlation. Typical values represent the most likely parametric norm at T
J = +25ºC, and are provided for
reference purposes only.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
BLEEDER
R
BLDR
Bleeder resistance to GND
I
BLDR = 10mA
230
325
V
CC SUPPLY
I
VCC
Operating supply current
2.00
2.85
mA
V
CC-UVLO
Rising threshold
7.4
7.7
V
Falling threshold
6.0
6.4
Hysterisis
1
COFF
V
COFF
Time out threshold
1.225 1.276
1.327
V
R
COFF
Off timer sinking impedance
33
60
t
COFF
Restart timer
180
µs
CURRENT LIMIT
V
ISNS
ISNS limit threshold
1.174 1.269
1.364
V
t
ISNS
Leading edge blanking time
125
ns
Current limit reset delay
180
µs
ISNS limit to GATE delay
ISNS = 0 to 1.75V step
33
ns
INTERNAL PWM RAMP
f
RAMP
Frequency
5.85
kHz
V
RAMP
Valley voltage
0.96
1.00
1.04
V
Peak voltage
2.85
3.00
3.08
D
RAMP
Maximum duty cycle
96.5
98.0
%
DIM DECODER
t
ANG_DET
Angle detect rising threshold
Observed on BLDR pin
6.79
7.21
7.81
V
V
ASNS
ASNS filter delay
4
µs
ASNS VMAX
3.85
4.00
4.15
V
I
ASNS
ASNS drive capability sink
V
ASNS = 2V
7.6
mA
ASNS drive capability source
V
ASNS = 2V
-4.3
DIM low sink current
V
DIM = 1V
1.65
2.80
DIM High source current
V
DIM = 4V
-4.00
-3.00
V
DIM
DIM low voltage
PWM input voltage
threshold
0.9
1.33
V
DIM high voltage
2.33
3.15
V
TSTH
Tri-state threshold voltage
Apply to FLTR1 pin
4.87
5.25
V
R
DIM
DIM comparator tri-state impedance
10
M
3
www.national.com


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