전자부품 데이터시트 검색엔진 |
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LM3445 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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LM3445 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
3 / 26 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. BLDR to GND -0.3V to +17V V CC, GATE, FLTR1 to GND -0.3V to +14V ISNS to GND -0.3V to +2.5V ASNS, DIM, FLTR2, COFF to GND -0.3V to +7.0V COFF Input Current 100mA Continuous Power Dissipation (Note 2) Internally Limited ESD Susceptibility HBM (Note 3) 2 kV Junction Temperature (T J-MAX) 150°C Storage Temperature Range -65°C to +150°C Maximum Lead Temp. Range (Soldering) 260°C Operating Conditions V CC 8.0V to 12V Junction Temperature −40°C to +125°C Electrical Characteristics Limits in standard type face are for T J = 25°C and those with boldface type apply over the full Operating Temperature Range ( T J = −40°C to +125°C). Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T J = +25ºC, and are provided for reference purposes only. Symbol Parameter Conditions Min Typ Max Units BLEEDER R BLDR Bleeder resistance to GND I BLDR = 10mA 230 325 Ω V CC SUPPLY I VCC Operating supply current 2.00 2.85 mA V CC-UVLO Rising threshold 7.4 7.7 V Falling threshold 6.0 6.4 Hysterisis 1 COFF V COFF Time out threshold 1.225 1.276 1.327 V R COFF Off timer sinking impedance 33 60 Ω t COFF Restart timer 180 µs CURRENT LIMIT V ISNS ISNS limit threshold 1.174 1.269 1.364 V t ISNS Leading edge blanking time 125 ns Current limit reset delay 180 µs ISNS limit to GATE delay ISNS = 0 to 1.75V step 33 ns INTERNAL PWM RAMP f RAMP Frequency 5.85 kHz V RAMP Valley voltage 0.96 1.00 1.04 V Peak voltage 2.85 3.00 3.08 D RAMP Maximum duty cycle 96.5 98.0 % DIM DECODER t ANG_DET Angle detect rising threshold Observed on BLDR pin 6.79 7.21 7.81 V V ASNS ASNS filter delay 4 µs ASNS VMAX 3.85 4.00 4.15 V I ASNS ASNS drive capability sink V ASNS = 2V 7.6 mA ASNS drive capability source V ASNS = 2V -4.3 DIM low sink current V DIM = 1V 1.65 2.80 DIM High source current V DIM = 4V -4.00 -3.00 V DIM DIM low voltage PWM input voltage threshold 0.9 1.33 V DIM high voltage 2.33 3.15 V TSTH Tri-state threshold voltage Apply to FLTR1 pin 4.87 5.25 V R DIM DIM comparator tri-state impedance 10 M Ω 3 www.national.com |
유사한 부품 번호 - LM3445_10 |
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유사한 설명 - LM3445_10 |
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