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BTA416Y-800B 데이터시트(PDF) 7 Page - NXP Semiconductors

부품명 BTA416Y-800B
상세설명  16 A three-quadrant triacs insulated, high commutation, high temperature
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제조업체  NXP [NXP Semiconductors]
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BTA416Y_SER_B_C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2008
7 of 12
NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs insulated, high commutation, high temperature
8.
Dynamic characteristics
Table 7.
Dynamic characteristics
Symbol Parameter
Conditions
BTA416Y-600B
BTA416Y-800B
BTA416Y-600C
BTA416Y-800C
Unit
Min
Typ
Max
Min
Typ
Max
dVD/dt
rate of rise of
off-state
voltage
VDM = 0.67 × VDRM(max); Tj = 125 °C;
exponential waveform; gate open circuit
1000
-
-
500
-
-
V/
µs
VDM = 0.67 × VDRM(max); Tj = 150 °C;
exponential waveform; gate open circuit
600
-
-
300
-
-
V/
µs
dIcom/dt
rate of change
of
commutating
current
VDM = 400 V; Tj = 125 °C; IT(RMS) =16A;
without snubber; gate open circuit
15
-
-
10
-
-
A/ms
VDM = 400 V; Tj = 150 °C; IT(RMS) =16A;
without snubber; gate open circuit
6
-
-
4
-
-
A/ms
tgt
gate-controlle
d turn-on time
ITM = 20 A; VD =VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
-2
--2
-
µs
(1) T2
− G−
(2) T2+ G
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function
of junction temperature
Fig 8.
Normalized gate trigger current as a function
of junction temperature
Tj (°C)
−50
150
100
50
0
001aag168
0.8
1.2
1.6
VGT
0.4
VGT(25°C)
Tj (°C)
−50
150
100
050
001aag165
1
2
3
0
(1)
(2)
(3)
IGT
IGT(25°C)


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