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FDD3510H 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FDD3510H 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page FDD3510H Rev.C www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Symbol Parameter Test Conditions Type Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID =250µA, VGS = 0V ID = -250µA, VGS = 0V Q1 Q2 80 -80 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 84 -67 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 64V, VGS = 0V VDS = -64V, VGS = 0V Q1 Q2 1 -1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V Q1 Q2 ±100 ±100 nA nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Q1 Q2 2.0 -1.0 2.6 -1.6 4.0 -3.0 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 -6.7 4.6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 4.3A VGS = 6.0V, ID = 4.1A VGS = 10V, ID = 4.3A, TJ = 125°C Q1 64 70 121 80 88 152 m Ω VGS = -10V, ID = -2.8A VGS = -4.5V, ID = -2.6A VGS = -10V, ID = -2.8A, TJ = 125°C Q2 153 184 259 190 224 322 gFS Forward Transconductance VDD = 10V, ID = 4.3A VDD = -5V, ID = -2.8A Q1 Q2 15 6.8 S Ciss Input Capacitance Q1 VDS = 40V, VGS = 0V, f = 1MHZ Q2 VDS = -40V, VGS = 0V, f = 1MHZ Q1 Q2 600 660 800 880 pF Coss Output Capacitance Q1 Q2 56 50 75 70 pF Crss Reverse Transfer Capacitance Q1 Q2 27 25 41 40 pF Rg Gate Resistance f = 1MHz Q1 Q2 1.7 7.2 Ω td(on) Turn-On Delay Time Q1 VDD = 40V, ID = 4.3A, VGS = 10V, RGEN = 6Ω Q2 VDD = -40V, ID = -2.8A, VGS = -10V, RGEN = 6Ω Q1 Q2 7 6 13 11 ns tr Rise Time Q1 Q2 2 3 10 10 ns td(off) Turn-Off Delay Time Q1 Q2 16 25 29 40 ns tf Fall Time Q1 Q2 2 5 10 10 ns Qg(TOT) Total Gate Charge Q1 VGS = 10V, VDD = 40V, ID = 4.3A Q2 VGS = -10V, VDD = -40V, ID = -2.8A Q1 Q2 13 14 18 20 nC Qgs Gate to Source Charge Q1 Q2 2.3 1.9 nC Qgd Gate to Drain “Miller” Charge Q1 Q2 3.2 2.9 nC |
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