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STP8NM60N 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 19 page November 2008 Rev 3 1/19 19 STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N 650 V < 0.65 Ω 7 A STD8NM60N 650 V < 0.65 Ω 7 A STD8NM60N-1 650 V < 0.65 Ω 7 A STF8NM60N 650 V < 0.65 Ω 7 A(1) 1. Limited only by maximum temperature allowed STP8NM60N 650 V < 0.65 Ω 7 A TO-220 DPAK IPAK 1 2 3 3 2 1 1 3 1 2 3 TO-220FP 1 3 D²PAK Table 1. Device summary Order codes Marking Package Packaging STB8NM60N B8NM60N D²PAK Tape and reel STD8NM60N D8NM60N DPAK Tape and reel STD8NM60N-1 D8NM60N IPAK Tube STF8NM60N F8NM60N TO-220FP Tube STP8NM60N P8NM60N TO-220 Tube www.st.com |
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