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STP2NK100Z 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STP2NK100Z
상세설명  N-channel 1000 V, 6.25 廓, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STP2NK100Z 데이터시트(HTML) 3 Page - STMicroelectronics

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STD2NK100Z - STP2NK100Z - STU2NK100Z
Electrical ratings
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
1000
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
1.85
A
ID
Drain current (continuous) at TC = 100 °C
1.16
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
7.4
A
PTOT
Total dissipation at TC = 25 °C
70
W
Derating factor
0.56
W/°C
VESD(G-S)
G-S ESD (HBM C=100 pF, R=1.5 k
Ω)
3000
V
dv/dt (2)
2.
ISD ≤ 1.85 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
2.5
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
IPAK
DPAK
Rthj-case
Thermal resistance junction-case max
1.79
°C/W
Rthj-pcb
Thermal resistance junction-pcb minimum footprint
--
--
50
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
100
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAR
(1)
1.
Pulse width limited by Tjmax
Avalanche current, repetitive or not-repetitive
1.85
A
EAS
(2)
2.
Starting Tj = 25°C, ID = IAR, VDD = 50V
Single pulse avalanche energy
170
mJ


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