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STP85N3LH5 데이터시트(PDF) 4 Page - STMicroelectronics |
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STP85N3LH5 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STD85N3LH5, STP85N3LH5, STU85N3LH5 4/16 Doc ID 13833 Rev 7 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown Voltage ID = 250 µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V,Tc = 125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 1.8 2.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A SMD version 0.042 0.005 Ω VGS = 10 V, ID = 40 A 0.0046 0.0054 Ω VGS = 5 V, ID = 40 A SMD version 0.0052 0.0065 Ω VGS = 5 V, ID = 40 A 0.0058 0.0071 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 1850 380 58 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 80 A VGS = 5 V Figure 16 14 6.8 4.7 nC nC nC Qgs1 Qgs2 Pre Vth gate-to-source charge Post Vth gate-to-source charge VDD = 15 V, ID = 80 A VGS = 5 V Figure 16 2.3 4.5 nC nC RG Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain 1.2 Ω |
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