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BC846BLT1G 데이터시트(PDF) 2 Page - ON Semiconductor |
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2 / 13 page BC846ALT1G Series http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 − − − − − − V Collector−Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 − − − − − − V Collector−Base Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CBO 80 50 30 − − − − − − V Emitter−Base Breakdown Voltage BC846A,B (IE = 1.0 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 5.0 − − − − − − V Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO − − − − 15 5.0 nA mA ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B BC847C, BC848C (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C hFE − − − 110 200 420 90 150 270 180 290 520 − − − 220 450 800 − Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C NF − − − − 10 4.0 dB |
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