STX23NM60ND_10 datasheet(5/18 Pages) STMICROELECTRONICS

부품명	STX23NM60ND

상세설명	N-channel 600 V, 0.150 廓, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D짼PAK, I짼PAK, TO-220, TO-220FP, TO-247

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5 / 18 page

STB/I/F/P/W23NM60ND

Electrical characteristics

Doc ID 14367 Rev 3

5/18

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 10 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

-

25

45

90

40

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

19.5

78

A

VSD

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 19.5 A, VGS=0

-

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 19.5 A, di/dt =100

A/µs, VDD = 100 V

(see Figure 20)

-

190

1.2

13

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VDD = 100 V

di/dt =100 A/µs, ISD = 19.5

A Tj = 150 °C

(see Figure 20)

-

260

2.0

15

ns

µC

A

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