SPI20N65C3 datasheet(7/15 Pages) INFINEON

부품명	SPI20N65C3

상세설명	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

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제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

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7 / 15 page

200

7-08-30

Rev. 3.0

Page 7

SPP20N65C3, SPA20N65C3

SPI20N65C3

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 13.1 A, VGS = 10 V

-60

-20

20

60

100

°C

180

Tj

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Ω

1.1

SPP20N65C3

typ

98%

10 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0

1

2

3

4

5

6

7

V

9

VGS

0

10

20

30

40

50

60

A

80

150°C

25°C

12 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

0

0.4

0.8

1.2

1.6

2

2.4

V

3

VSD

-1

10

0

10

1

10

2

10

A

SPP20N65C3

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

11 Typ. gate charge

VGS = f (QGate)

parameter: ID = 20.7 A pulsed

0

20

40

60

80

100

nC

140

QGate

0

2

4

6

8

10

12

V

16

SPP20N65C3

0,8 VDS max

DS max

V

0,2

유사한 부품 번호 - SPI20N65C3

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	SPI20N65C3	784Kb / 14P	Cool MOS??Power Transistor 2003-08-15
Infineon Technologies A...	SPI20N65C3	622Kb / 15P	New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 3.1 2009-12-01
Inchange Semiconductor ...	SPI20N65C3	331Kb / 2P	isc N-Channel MOSFET Transistor

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SPI20N65C3 데이터시트(PDF) 7 Page - Infineon Technologies AG

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