전자부품 데이터시트 검색엔진 |
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BAR90-081LS 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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BAR90-081LS 데이터시트(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2009-01-26 1 BAR90-081LS Silicon Trench PIN Diode Array • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA) • Improved ON / OFF mode harmonic distortion balance • Very small form factor: 1.34 x 0.74 x 0.31 mm³ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAR90-081LS 1 23 4 5 6 7 8 Type Package Configuration LS(nH) Marking BAR90-081LS TSSLP-8-1 quad array 0.2 WM Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80 V Forward current IF 100 mA Total power dissipation TS ≤ 137 °C Ptot 150 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 |
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