SPI11N65C3 datasheet(7/15 Pages) INFINEON

부품명	SPI11N65C3

상세설명	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

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7 / 15 page

200

7-08-30

Rev. 2.

9

Page 7

SPP11N65C3,SPA11N65C3

SPI11N65C3

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 7 A, VGS = 10 V

-60

-20

20

60

100

°C

180

Tj

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

Ω

2.1

SPP11N65C3

typ

98%

10 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0

2

4

6

8

10

12

V

15

VGS

0

4

8

12

16

20

24

28

32

A

40

25°C

150°C

12 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

0

0.4

0.8

1.2

1.6

2

2.4

V

3

VSD

-1

10

0

10

1

10

2

10

A

SPP11N65C3

T

j

= 25 °C typ

T

j

= 25 °C (98%)

T

j

= 150 °C typ

T

j

= 150 °C (98%)

11 Typ. gate charge

V

GS = f (QGate)

parameter: ID = 11 A pulsed

0

10

20

30

40

50

nC

70

QGate

0

2

4

6

8

10

12

V

16

SPP11N65C3

0,8 VDS max

DS max

V

0,2

유사한 부품 번호 - SPI11N65C3

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	SPI11N65C3	816Kb / 14P	Cool MOS??Power Transistor 2003-08-15
Infineon Technologies A...	SPI11N65C3	574Kb / 15P	Cool MOS??Power Transistor Feature New revolutionary high voltage technology Rev. 2.91 2009-11-30
Inchange Semiconductor ...	SPI11N65C3	331Kb / 2P	isc N-Channel MOSFET Transistor

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SPI11N65C3 데이터시트(PDF) 7 Page - Infineon Technologies AG

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