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SPI15N60CFD 데이터시트(PDF) 7 Page - Infineon Technologies AG |
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SPI15N60CFD 데이터시트(HTML) 7 Page - Infineon Technologies AG |
7 / 12 page SPI15N60CFD 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=13.4 A pulsed I F=f(V SD) parameter: V DD parameter: T j 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=6.7 A; V DD=50 V parameter: T j(start) 0 60 120 180 240 300 360 420 480 25 75 125 175 T j [°C] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 V SD [V] 125 °C 25 °C 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 2 4 6 8 10 12 14 t AR [µs] 120 V 480 V 0 2 4 6 8 10 020 40 60 80 Q gate [nC] Rev. 1.0 page 7 2007-01-29 |
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