전자부품 데이터시트 검색엔진 |
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FC903 데이터시트(PDF) 1 Page - Sanyo Semicon Device |
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FC903 데이터시트(HTML) 1 Page - Sanyo Semicon Device |
1 / 2 page FC903 No.3869-1/2 Features • Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC903 is formed with 3 chips, each being equivalent to the DSB010, placed in one package. • High switching speed. Electrical Connection Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM 300 mA Average Rectified Current IO 100 mA Surge Forward Current IFSM 1 µs4 A Allowable Power Dissipation P Total value 300 mW Junction Temperature Tj 125 °C Storage Temperature Tstg -- 55 to + 125 °C Electrical Characteristics at Ta=25 °C Parameter Symbol Conditions Ratings min typ max Unit Forward Voltage VF1IF=1mA 0.60 V VF2IF=10mA 0.72 V VF3IF=100mA 1.2 V Reverse Current IR1VR=30V 0.1 µA IR2VR=80V 0.5 µA Interterminal Capacitance C VR=0, f=1MHz 3.0 pF Reverse Recovery Time trr IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp 4.0 ns Note : The specifications shown above are for each individual diode. Marking : 903 trr Test Circuit SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN3869B FC903 High-Speed Switching Composite Diode Package Dimensions unit : mm 1296 [FC903] Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. Silicon Epitaxial Planar Type --6V-- 50ns 0 50‰ 50‰ 0.01 F D.U.T IF=10mA 0.1Irp Irp trr 2k‰ 82599 GI IM 63098HA(KT) / 31497 GI / N151MH, (KOTO) 1 : Cathode 2 : Cathode 3 : Cathode 4 : Anode 5 : Anode 6 : Anode 12 3 65 4 1 : Cathode 2 : Cathode 3 : Cathode 4 : Anode 5 : Anode 6 : Anode SANYO : TCP6 0.3 1.1 2.9 0.95 0.8 0 to 0.1 1.9 0.95 12 3 65 4 0.15 |
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