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MC13850 데이터시트(PDF) 5 Page - Freescale Semiconductor, Inc |
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MC13850 데이터시트(HTML) 5 Page - Freescale Semiconductor, Inc |
5 / 54 page Electrical Specifications MC13850 Advance Information, Rev. 1 Freescale Semiconductor 5 Gain S21 dB Low IP3 20.5 21.5 — High IP3 23.1 24.1 — Bypass -7.7 -6.7 — 860 MHz (refer to Figure 14) RF Gain G dB Low IP3 16.4 17.4 — High IP3 18 19 — Bypass -6.7 -6.2 — Noise Figure NF dB Low IP3 — 1.22 1.5 High IP3 — 1.32 1.6 Bypass — 5.2 5.7 Input IP3 IIP3 dBm Low IP3 -5.3 -4 — High IP3 -2.3 -1.1 — Bypass 23.7 24.7 — Power Output at 1.0 dB Gain Compression P1dBoutput dBm Low IP3 7.4 8.4 — High IP3 8.1 9.2 — Gain S21 dB Low IP3 17 18 — High IP3 18.4 19.4 — Bypass -6.8 -5.8 — 900 MHz (refer to Figure 15) RF Gain G dB Low IP3 20 21 — High IP3 20.8 21.8 — Bypass -4.5 -3.7 — Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued) (Vcc = 2.7V, TA = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit |
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