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FW111 데이터시트(PDF) 1 Page - Sanyo Semicon Device |
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FW111 데이터시트(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page D1498TS (KOTO) TA-1214 No.5909-1/4 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. P-Channel Silicon MOSFET Load S/W Applications Ordering number:EN5909 FW111 Specifications Absolute Maximum Ratings at Ta = 25˚C 14 5 8 0.2 5.0 0.595 1.27 0.43 Electrical Characteristics at Ta = 25˚C Package Dimensions unit:mm 2129 [FW111] Features · 2.5V drive. · Low ON resistance. 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V n w o d k a e r B e c r u o S - o t - n i a r DV S S D ) R B ( ID V , A m 1 – = S G 0 =0 2 –V t n e r r u C n i a r D e g a t l o V e t a G - o r e ZI S S D V S D V , V 0 2 – = S G 0 =0 0 1 –A µ t n e r r u C e g a k a e L e c r u o S - o t - e t a GI S S G V S G V , V 8 ± = S D 0 =0 1 ±A µ e g a t l o V f f o t u CV ) f f o ( S G V S D I , V 0 1 – = D A m 1 – =4 . 0 –4 . 1 –V e c n a t t i m d A r e f s n a r T d r a w r o F| s f y |V S D I , V 0 1 – = D A 5 – =8 2 1S e c n a t s i s e R e t a t S - n O e c r u o S - o t - n i a r D c i t a t S R ) n o ( S D 1ID V , A 5 – = S G V 4 – =4 48 5m Ω R ) n o ( S D 2ID V , A 2 – = S G V 5 . 2 – =5 68 9m Ω e c n a t i c a p a C t u p n Is s i CV S D z H M 1 = f , V 0 1 – =0 8 9F p e c n a t i c a p a C t u p t u Os s o CV S D z H M 1 = f , V 0 1 – =0 0 5F p e c n a t i c a p a C r e f s n a r T e s r e v e Rs s r CV S D z H M 1 = f , V 0 1 – =0 1 2F p r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e c r u o S - o t - n i a r DV S S D 0 2 –V e g a t l o V e c r u o S - o t - e t a GV S S G 0 1 ±V ) C D ( t n e r r u C n i a r DID 5 –A ) e s l u p ( t n e r r u C n i a r DI P D W P ≤ e l c y c y t u d , s µ 0 1 ≤ % 12 3 –A n o i t a p i s s i D r e w o P e l b a w o ll APD 7 . 1W n o i t a p i s s i D l a t o TPT 0 . 2W e r u t a r e p m e T l e n n a h Ch c T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – Mounted on a ceramic board (1000mm2 ×0.8mm) 1unit Mounted on a ceramic board (1000mm2 ×0.8mm) ˚C ˚C Continued on next page. |
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