전자부품 데이터시트 검색엔진 |
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FDD3860 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDD3860 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page www.fairchildsemi.com 4 ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 Figure 7. 0 5 10 15 20 25 0 2 4 6 8 10 ID = 5.9A VDD = 75V VDD = 25V Qg, GATE CHARGE (nC) VDD = 50V Gate Charge Characteristics Figure 8. 0.1 1 10 100 10 100 1000 3000 f = 1MHz VGS = 0V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure9. 0.01 0.1 1 10 100 2 4 6 8 10 1 TJ = 25oC TJ = 125oC t AV, TIME IN AVALANCHE (ms) Unclamped Inductive Switching Capability Figure 10. 25 50 75 100 125 150 0 7 14 21 28 35 RθJC = 1.8 o C/W VGS = 10V T C , CASE TEMPERATURE ( o C ) Maximum Continuous Drain Current vs Case Temperature Figure 11. Forward Bias Safe Operating Area 0.1 1 10 100 0.1 1 10 100 DC 10ms 1ms 100us THIS AREA IS LIMITED BY rds(on) 300 SINGLE PULSE TJ = MAX RATED RθJC = 1.8 oC/W TC = 25oC VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 10 2 10 3 10 4 10 5 V GS = 10V SINGLE PULSE RθJC = 1.8 o C/W t, PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation Typical Characteristics T J = 25°C unless otherwise noted |
유사한 부품 번호 - FDD3860 |
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유사한 설명 - FDD3860 |
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