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SILICON POWER TRANSISTOR

2SA1413-Z

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

DATA SHEET

Document No. D18251EJ4V0DS00 (4th edition)

(Previous No. TC-1636A)

Date Published June 2006 NS CP(K)

Printed in Japan

1985, 2006

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The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The 2SA1413-Z is designed for High Voltage Switching, especially in

Hybrid Integrated Circuits.

FEATURES

−600 V

≤ 1.0

• Complement to 2SC3632-Z

°C)

Collector to base voltage

−600

V

Collector to emitter voltage

−600

V

Base to emitter voltage

−7

V

Collector current (DC)

−1.0

A

Collector current (pulse)

Note 1

−2.0

A

°C)

Note 2

2.0

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm

PACKAGE DRAWING (Unit: mm)

12 3

4

6.5 ±0.2

4.4 ±0.2

5.0 ±0.2

0.5 ±0.1

0.5 ±0.1

2.3 ±0.2

0.5 ±0.1

Note

Note

0.15 ±0.15

2.3 ±0.3

2.3 ±0.3

TO-252 (MP-3Z)

1. Base

2. Collector

3. Emitter

4. Collector Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

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