전자부품 데이터시트 검색엔진 |
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1N4246 데이터시트(PDF) 1 Page - EIC discrete Semiconductors |
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1N4246 데이터시트(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 1 page 1N4245 - 1N4249 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated chip * High forward surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N4245 1N4246 1N4247 1N4248 1N4249 UNIT Maximum Working Peak Reverse Voltage VRWM 200 400 600 800 1000 V Minimum Breakdown Voltage @ 100 μA VBR(MIN) 240 480 720 960 1150 V Maximum Average Forward Current at Ta = 55 °C IF(AV) A Peak Forward Surge Current 8.3 ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 A VF 1.3 V Maximum Reverse Current at VRWM, Ta = 25 °C IR 1.0 at VRWM, Ta = 150 °C IR(H) 150 Maximum Reverse Recovery Time ( Note 1 ) Trr 5.0 μs Thermal Resistance , Junction to Lead (Note 2) RӨJL 42 °C/W Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C Notes : (1) Reverse Recovery Test Conditions : IF = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A. (2) At 3/8"(10 mm) lead length form body. Page 1 of 1 Rev. 03 : November 2, 2006 μA A RATING 1.0 IFSM 25 M1A Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.085(2.16) 0.075(1.91) 0.138(3.51) 0.122(3.10) 1.00 (25.4) MIN. 0.024(0.60) 0.022(0.55) Certificate TH97/10561QM Certificate TW00/17276EM |
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유사한 설명 - 1N4246 |
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