AM82731-012

NPN RF POWER TRANSISTOR

DESCRIPTION:

Base Device Designed for Pulsed S-

Band Pulse output and driver Radar

Amplifier Applications.

FEATURES INCLUDE:

• Input/Output Matching

• Gold Metallization

• Emitter Ballasting

MAXIMUM RATINGS

2.0 A

46 V

-65 °C to+250 °C

-65 °C to+200 °C

θ

JC

4.0 °C/W

PACKAGE STYLE 400 2L FLG

1 = COLLECTOR

2 & 4 = BASE

3 = EMITTER

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL MAXIMUM

UNITS

55

V

55

V

3.5

V

0.5

mA

30

300

---

η

C

f = 2.7 to 3.1 GHz

12

30

6.0

W

%

dB

Note:

Pulse Width = 100

μS

Duty Cycle = 10%

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV.

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.