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NBVSPA015LN1TAG 데이터시트(PDF) 4 Page - ON Semiconductor |
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NBVSPA015LN1TAG 데이터시트(HTML) 4 Page - ON Semiconductor |
4 / 8 page NBVSPA015 Series http://onsemi.com 4 Table 6. AC CHARACTERISTICS (VDD = 3.3 ±10%, GND = 0 V, TA = −40°C to +85°C) (Note 5) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency NBVSPA019 125.00 MHz NBVSPA027 148.50 NBVSPA018 155.52 NBVSPA017 156.25 NBVSPA024 160.00 NBVSPA015 200.00 NBVSPA042 74.25 Df Frequency Stability – NBVSPAXXX (Note 6) ±50 ppm tjit(f) RMS Phase Jitter 12 kHz to 20 MHz 0.4 0.9 ps tjitter Cycle to Cycle, RMS 1000 Cycles 3 8 ps Cycle to Cycle, Peak−to−Peak 1000 Cycles 15 30 ps Period, RMS 10,000 Cycles 2 4 ps Period, Peak−to−Peak 10,000 Cycles 10 20 ps tOE/OD Output Enable/Disable Time 200 ns FP Crystal Pullability (Note 7) 0 V ≤ VC ≤ 3.3 V ±100 ppm VC(bw) Control Voltage Bandwidth −3 dB 20 KHz tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 45 50 55 % tR Output Rise Time (20% and 80%) 245 400 ps tF Output Fall Time (80% and 20%) 245 400 ps tstart Start−up Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 5. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 3. 6. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration and first year aging. 7. Gain transfer is positive with a rate of 130 ppm/V. Table 7. PHASE NOISE PERFORMANCE FOR NBVSPXXXX Parameter Charac- teristic Condition 74.25 MHZ 125.00 MHZ 148.50 MHz 155.52 MHz 156.25 MHZ 160.00 MHz 200.00 MHZ Units fNOISE Output Phase−N oise Performa nce 100 Hz of Carrier −94 −90 −90 −90 −90 −90 −91 dBc/Hz 1 kHz of Carrier −122 −117 −116 −116 −116 −116 −117 dBc/Hz 10 kHz of Carrier −132 −128 −126 −126 −126 −126 −127 dBc/Hz 100 kHz of Carrier −132 −128 −126 −126 −126 −126 −127 dBc/Hz 1 MHz of Carrier −142 −136 −136 −134 −134 −135 −135 dBc/Hz 10 MHz of Carrier −160 −159 −159 −159 −159 −159 −159 dBc/Hz |
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