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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRLP3034PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLP3034PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLP3034PbF 2 www.irf.com S D G
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C Notes: Calcuted continuous current based on maximum allowable junction temperature Bond wire current limit is 195A. Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.013mH RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use above this value . ISD ≤ 195A, di/dt ≤ 841A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C ––– 1.4 1.7 ––– 1.6 2.0 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 2.1 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 286 ––– ––– S Qg Total Gate Charge ––– 108 162 Qgs Gate-to-Source Charge ––– 29 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 54 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 54 ––– td(on) Turn-On Delay Time ––– 65 ––– tr Rise Time ––– 827 ––– td(off) Turn-Off Delay Time ––– 97 ––– tf Fall Time ––– 355 ––– Ciss Input Capacitance ––– 10315 ––– Coss Output Capacitance ––– 1980 ––– Crss Reverse Transfer Capacitance ––– 935 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)iÖ–– 2378 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) h ––– 2986 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– (Body Diode) ISM Pulsed Source Current ––– ––– (Body Diode) Ãd VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 39 ––– TJ = 25°C VR = 34V, ––– 41 ––– TJ = 125°C IF = 195A Qrr Reverse Recovery Charge ––– 39 ––– TJ = 25°C di/dt = 100A/µs g ––– 46 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.7 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = -20V showing the VDS = 20V Conditions VGS = 4.5V g VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V i Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mAd VGS = 10V, ID = 195A g VDS = VGS, ID = 250µA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C ns VGS = 0V, VDS = 0V to 32V h MOSFET symbol TJ = 25°C, IS = 195A, VGS = 0V g integral reverse p-n junction diode. VGS = 20V nC µA nA nC ns RDS(on) Static Drain-to-Source On-Resistance pF A 327 1308 VGS = 4.5V, ID = 172A g m Ω ID = 195A RG = 2.1Ω VGS = 4.5V g VDD = 26V ID = 185A, VDS =0V, VGS = 4.5V Conditions VDS = 10V, ID = 195A ID = 185A |
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