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2 / 2 page 2N1132CSM Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7518, ISSUE 1 ELECTRICAL CHARACTERISTICS (T Amb = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CBO* Collector-Base Breakdown Voltage IC = 10µA IE = 0 50 V(BR)CEO* Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 40 V IE = 0 VCB = 50V 10 VCB = 30V 1 ICBO Collector to Base Cut-Off Current IE = 0 Tamb =150°C 100 IEBO Emitter to Base Cut-Off Current IC = 0 VEB = 5V 100 µA ICER Collector to Emitter Cut-Off Current RBE <= 10 VCE = 50V 10 mA IC = 150mA 30 100 hFE* DC Current Gain VCE = 10V IC = 5mA 25 VCE(SAT)* Collector To Emitter Saturation Voltage 1.3 VBE(SAT)* Base To Emitter Saturation Voltage IC = 150mA IB = 15mA 1.5 V DYNAMIC CHARACTERISTICS VCB = 10V IE = 0 COBO Output Capacitance f = 1.0MHz 45 VEB = 0.5V IC = 0 CIBO Input Capacitance f = 1.0MHz 80 pF IC = 50mA VCE = 10V | hfe | Small Signal Current Gain f = 20MHz 3.0 20 td Delay Time 15 tr Rise Time 25 ts Storage Time 80 tf Fall Time VCC = 30V IC = 150mA IB1 - IB2 = 15mA 25 nS * Pulse test tp = 300µs, δ < 2% THERMAL CHARACTERISTICS Max. Unit Rth j-Amb Thermal resistance to ambient 375 °C/W |
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