2N3634 datasheet(2/2 Pages) SEME-LAB

부품명	2N3634

상세설명	PNP SILICON TRANSISTOR

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Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

-140

-5.0

-50

-100

40

45

50

150

25

-0.3

-0.5

-0.8

-0.65

-0.9

100

10

75

100

600

3.0

40

160

200

3.0

400

600

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

BVCEO

Collector–Emitter Breakdown Voltage1

BVCBO

Collector – Base Breakdown Voltage1

BVEBO

Emitter – Base Breakdown Voltage1

IEBO

Emitter Cut-off Current

ICBO

Collector Cut-off Current

hFE

DC Current Gain1

VCE(sat)

Collector – Emitter Saturation Voltage1

VBE(sat)

Base – Emitter Saturation Voltage1

ft

Current Gain Bandwidth Product

Cob

Output Capacitance

Cib

Input Capacitance

hie

Input Impedance

hre

Voltage Feedback Ratio

hfe

Small Signal Current Gain

hoe

Output Admittance

NF

Noise Figure

ton

Turn–On Time

toff

Turn–Off Time

IC = -10mA

IB = 0

IC = -100μAIE = 0

IC = 0

IE = -10μA

VBE = -3.0V

IC = 0

VCB = -100V

IE = 0

IC = -0.1mA

VCE = -10V

IC = -1.0mA

VCE = -10V

IC = -10mA

VCE = -10V

IC = -50mA

VCE = -10V

IC = -150mA

VCE = -10V

IC = -10mA

IB = -1.0mA

IC = -50mA

IB = -5mA

IC = -10mA

IB = -1.0mA

IC = -50mA

IB = -5mA

VCE = -30V

IC = -30mA

f = 100MHz

VCB = -20V

IE = 0

f = 100kHz

VBE = 1.0V

IC = 0

f = 1.0MHz

VCE = -10V

IC = -10mA

f = 1.0kHz

VCE = -10V

IC = -0.5mA

RS = 1.0KΩ

f = 1.0kHz

VCC = -100V

VBE = 4.0V

IC = -50mA IB1 = IB2 =-5mA

V

nA

−

V

MHz

pF

Ω

x10-4

—

μmhos

dB

ns

OFF CHARACTERISTICS

Document Number 7744

Issue 1

2N3634

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

1) Pulse test : Pulse Width < 300

μs ,Duty Cycle < 2%

ON CHARACTERISTICS

SWITCHING CHARACTERISTICS

SMALL SIGNAL CHARACTERISTICS

유사한 부품 번호 - 2N3634

제조업체	부품명	데이터시트	상세설명
Boca Semiconductor Corp...	2N3634	219Kb / 6P	GENERAL PURPOSE TRANSISTOR (PNP SILICON)
Microsemi Corporation	2N3634	57Kb / 2P	PNP SILICON AMPLIFIER TRANSISTOR
Central Semiconductor C...	2N3634	22Kb / 1P	Small Signal Transistors
Microsemi Corporation	2N3634	233Kb / 5P	RADIATION HARDENED
Microsemi Corporation	2N3634	174Kb / 5P	PNP SILICON SWITCHING TRANSISTOR

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유사한 설명 - 2N3634

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STMicroelectronics	BD234	62Kb / 4P	SILICON PNP TRANSISTOR
Hi-Sincerity Mocroelect...	HMPS6562	38Kb / 4P	PNP SILICON TRANSISTOR
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	SRA2206SF	44Kb / 3P	PNP Silicon Transistor
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유사한 부품 번호 - 2N3634

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