Characteristics

STPS10L45C

2/10

1

Characteristics

When the diodes 1 and 2 are used simultaneously :

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 1.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

45

V

RMS forward voltage

20

A

Average forward

current

TO-220AB /

Tc =135° C

δ = 0.5

Per diode

Per device

5

10

A

TO-220FPAB

δ = 0.5

Per diode

Per device

5

10

A

Surge non repetitive forward current

150

A

Repetitive peak reverse current

1

A

Non repetitive peak reverse current

2

A

Repetitive peak avalanche power

2700

W

Storage temperature range

-65 to + 150

° C

1.

condition to avoid thermal runaway for a diode on its own heatsink

150

° C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 2.

Thermal resistances

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

3

1.7

°C/W

Coupling

0.35

Junction to case

TO-220FPAB

Per diode

Total

5

3.8

°C/W

Coupling

2.5

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test: tp = 380 µs,

δ < 2%

Reverse leakage current

0.15

mA

45

90

mA

VF

(1)

Forward voltage drop

0.53

V

0.36

0.46

0.67

0.49

0.59

dPtot

dTj

---------------

1

Rth j

a

–

()

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