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1N4448W-7-F 데이터시트(PDF) 2 Page - Diodes Incorporated |
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1N4448W-7-F 데이터시트(HTML) 2 Page - Diodes Incorporated |
2 / 4 page 1N4448W Document number: DS12002 Rev. 18 - 2 2 of 4 www.diodes.com November 2010 © Diodes Incorporated 1N4448W Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs @ t = 1.0s IFSM 4.0 1.0 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 400 mW Thermal Resistance Junction to Ambient Air (Note 4) RθJA 315 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 5) V(BR)R 75 ⎯ V IR = 10μA Forward Voltage VFM 0.62 ⎯ ⎯ ⎯ 0.72 0.855 1.0 1.25 V IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Peak Reverse Current (Note 5) IRM ⎯ 2.5 50 30 25 μA μA μA nA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V Total Capacitance CT ⎯ 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 4. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( C) Fig. 1 Power Derating Curve A ° 0 200 400 500 100 300 R = 315°C/W θJA 10 100 1 0.1 01,000 800 200 400 600 V , INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics F |
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