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BC846AS 데이터시트(PDF) 1 Page - Diodes Incorporated |
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BC846AS 데이터시트(HTML) 1 Page - Diodes Incorporated |
1 / 3 page DS30833 Rev. 7 - 2 1 of 3 www.diodes.com BC846AS © Diodes Incorporated BC846AS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • For Switching and AF Amplifier Applications • Complementary PNP Type Available (BC856AS) • Lead Free/RoHS Compliant (Note 1) • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering & Date Code Information: See Page 3 • Weight: 0.006 grams (approximate) SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ⎯ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0 ° 8° All Dimensions in mm C 1 65 4 3 2 1 B 2 E 2 E 1 B 1 C 2 A M J L D B C H K F Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 65 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Power Dissipation (Note 2) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 2) RθJA 625 °C/W Operating and Storage Temperature Range Tj, Tstg -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 3) V(BR)CBO 80 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO 65 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO 6 — — V IE = 1μA, IC = 0 DC Current Gain (Note 3) hFE 110 — 220 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE(ON) 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Cutoff Current (Note 3) ICES ICBO ICBO — — — — — — 15 15 5.0 nA nA µA VCE = 80V VCB = 40V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCB — 2.0 — pF VCB = 10V, f = 1.0MHz Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB, pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short duration pulse test used to minimize self-heating effect. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Please click here to visit our online spice models database. |
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