FZTA42 datasheet(2/2 Pages) DIODES

부품명	FZTA42

상세설명	SOT223 NPN SILICON PLANAR

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제조업체	DIODES [Diodes Incorporated]

홈페이지	http://www.diodes.com

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NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 2 MARCH 94

FEATURES

* High voltage

APPLICATIONS

* Telephone dialler circuit

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

6V

Continuous Collector Current

IC

500

mA

Power Dissipation at Tamb=25°C

Ptot

680

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +175

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

300

V

IC=100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

300

V

IC=1mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

6V

IE=100µA, IC=0

Collector Cut-Off

Current

ICBO

0.1

µ

A

VCB=200V, IE=0

Emitter Cut-Off Current IEBO

0.1

µ

A

VEB=6V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

0.5

V

IC=20mA, IB=2mA*

Base-Emitter

Saturation Voltage

VBE(sat)

0.9

V

IC=20mA, IB=2mA*

Static Forward Current

Transfer Ratio

hFE

25

40

IC=1mA, VCE=10V*

IC=10mA, VCE=10V*

IC=30mA, VCE=10V*

Transition

Frequency

fT

50

MHz

IC=10mA, VCE=20V

f=20MHz

Output Capacitance

Cobo

6pF

VCB=20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

E-Line

TO92 Compatible

MPSA42

3-78

C

B

E

Safe operating area

TYPICAL CHARACTERISTICS

0.1

10

100

1.0

60

0.1

10

100

1.0

0

40

80

20

100

120

0.001

100

10

0.01

1A

0.1

1000

1

100ms

10ms

1ms

D.C.

200

0.2

0.1

10

100

0.3

1.0

200

0

100

40

160

80

60

120

140

20

VCE=10V

140

VCE=20V

Single Pulse Test at Tamb=25°C

VCE(sat) vs IC

hFE vs IC

fT vs IC

VCE-Collector-Emitter Voltage (Volts)

IC-Collector Current (mA)

IC / IB=10

F

ZTA42

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