2SD1525

2009-08-06

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)

2SD1525

High Current Switching Applications

• Monolithic construction with built-in base-emitter shunt resistor.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

Collector-emitter voltage

100

V

Emitter-base voltage

5

V

Collector current

30

A

Base current

5

A

Collector power dissipation

(Tc = 25°C)

150

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

BASE

EMITTER

≈ 2 kΩ

≈ 100 Ω

COLLECTOR