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2SJ669 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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2SJ669 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SJ669 2009-09-29 4 RDS (ON) − Ta Ambient temperature Ta (°C) 0 −0.4 −0.1 −0.3 −0.2 −40 −80 160 0 40 120 80 Common source Pulse test ID = −5 A −2.5 −1.2 IDR − VDS Drain −source voltage VDS (V) 0.1 10 0.2 0 1.2 0.6 0.4 0.8 1.0 Common source Ta = 25°C Pulse test −10 −5 −3 −1 VGS = 0 V Ambient temperature Ta (°C) PD − Ta 2.0 0.5 1.0 1.5 0 0 80 200 40 160 Vth − Ta Ambient temperature Ta (°C) 0 −80 0 40 80 120 160 −40 −2.0 −0.4 −1.2 −0.8 −1.6 Common source VDS = −10 V ID = 1 mA Pulse test Capacitance – VDS Drain −source voltage VDS (V) 10 100 1000 10000 −0.1 −1 −10 −100 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 VGS = −10 V VGS = −4 V −5 −2.5 −1.2 120 Total gate charge Qg (nC) Dynamic input/output characteristics −50 −40 0 −30 −20 −10 0 25 30 10 5 −10 −5 −20 −25 0 −15 VGS VDS VDD = −48 V −12V −24V Common source ID = −5 A Ta = 25°C Pulse test 20 15 |
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