전자부품 데이터시트 검색엔진 |
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FAN7530 데이터시트(PDF) 16 Page - Fairchild Semiconductor |
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FAN7530 데이터시트(HTML) 16 Page - Fairchild Semiconductor |
16 / 37 page © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN9611 / FAN9612 • Rev. 1.1.3 16 Figure 24. Input Voltage Sensing Waveforms 10. Gate Drive Outputs (DRV1; DRV2) High-current driver outputs DRV1 and DRV2 have the capability to sink a minimum of 2A and source 1A. Due to the low impedance of these drivers, the 1A source current must be actively limited by an external gate resistor. The minimum external gate resistance is: A V R DD GATE 1 (3) To take advantage of the higher sink current capability of the drivers, the gate resistor can be bypassed by a small diode to facilitate faster turn-off of the power MOSFETs. Traditional fast turn-off circuit using a PNP transistor instead of a simple bypass diode can be considered as well. It is also imperative that the inductance of the gate drive loop is minimized to avoid excessive ringing. If optimum layout is not possible or the controller is placed on a daughter card, it is recommended to use an external driver circuit located near the gate and source terminals of the boost MOSFET transistors. Small gate charge power MOSFETs can be driven by a single 1A gate driver, such as the FAN3111C; while higher gate charge devices might require higher gate drive current capable devices, such as the single-2A FAN3100C or the dual- 2A FAN3227C family of drivers. 11. MillerDrive™ Gate Drive Technology FAN9611/12 output stage incorporates the MillerDrive™ architecture shown in Figure 25. It is a combination of bipolar and MOS devices which are capable of providing large currents over a wide range of supply voltage and temperature variations. The bipolar devices carry the bulk of the current as OUT swings between 1/3 to 2/3 VDD and the MOS devices pull the output to the high or low rail. The purpose of the MillerDrive™ architecture is to speed switching by providing high current during the Miller plateau region when the gate-drain capacitance of the MOSFET is being charged or discharged as part of the turn-on / turn-off process. The output pin slew rate is determined by VDD voltage and the load on the output. It is not user adjustable, but if a slower rise or fall time at the MOSFET gate is needed, a series resistor can be added. V DD V OUT Figure 25. Current-Sense Protection Circuits |
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