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QXX35RH5 데이터시트(PDF) 1 Page - Littelfuse |
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1 / 9 page 137 Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc Teccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. 35 Amp Standard & 30 / 35 Amp Alternistor (High Commutation) Triacs Qxx30xHx & Qxx35xx & Qxx35xHx Series Qxx30xHx & Qxx35xx & Qxx35xHx Series Description Main Features 30 Amp / 35 Amp bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from AC line. Alternistor type devices only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability. Symbol Value Unit I T(RMS) 30 & 35 A V DRM/VRRM 400 to 800 V I GT (Q1) 50 mA Features & Benefits • RoHS Compliant • Glass – passivated junctions • Voltage capability up to 800V • Surge capability up to 350A • Electrically isolated package “FASTPAK” & “L - Package” are UL recognized for 2500Vrms Schematic Symbol Applications Excellent for AC switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are AC solid-state switches, industrial power tools, exercise equipment, white goods and commercial appliances. Alternistor Triacs (no snubber required) are used in applications with extremely inductive loads requiring highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. MT1 G MT2 Agency Approval Agency Agency File Number ® FASTPAK & L Package: E71639 Absolute Maximum Ratings —Standard Triac Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Qxx35P5 T C = 55°C 35 A I TSM Non repetitive surge peak on-state current (full cycle, T J initial = 25°C) f = 50 Hz t = 20 ms 300 A f = 60 Hz t = 16.7 ms 350 I2t I2t Value for fusing t p = 8.3 ms 508 A2s di/dt Critical rate of rise of on-state current (I G = 200mA with ≤ 0.1µs rise time) f = 120 Hz T J = 125°C 100 A/μs I GTM Peak gate trigger current t p ≤ 10 μs IGT ≤ IGTM T J = 125°C 2 A P G(AV) Average gate power dissipation T J = 125°C 0.5 W T stg Storage temperature range -40 to 125 °C T J Operating junction temperature range -25 to 125 °C Note: xx = voltage ® |
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