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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SB15100S 데이터시트(PDF) 1 Page - Semikron International |
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SB15100S 데이터시트(HTML) 1 Page - Semikron International |
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1 / 3 page  SB 1520S ... SB 15100S © by SEMIKRON Rev. 3 – 21.01.2011 1 Axial Lead Diode Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520S ... SB 15100S Features • Max. solder temperature: 260°C • Plastic material has UL classification 94V-0 • Electrostatic discharge immunity test IEC 1000-4-2 (C=150 pF, R=150 Ohm): voltage class 20 kV Typical Applications* • Designed as Bypass Diodes for Solar Panels, protection application Mechanical Data • Plastic case: 5,4 x 7,5 [mm] • Weight approx.: 1,4 g • Terminals: plated terminals solderable per MIL-STD-750 • Mounting position: any • Standard packaging: 1250 pieces per ammo Footnotes 1) IF = - A, IR = - A, IRR = - A 2) IF = 5 A, Tj = 25 °C 3) IF = 15 A, Tj = 25 °C 4) Valid, if leads are kept at TA at a distance of 10 mm from case 5) Max. junction temperature Tj ≤200 °C in bypass mode / DC forward mode 6) Thermal resistance from junction to lead/ terminal at distance 0 mm from case Type Repetitive peak reverse voltage VRRM V Surge peak reverse voltage VRSM V Max. reverse recovery time trr1) ns Max. forward voltage VF2) V Max. forward voltage VF3) V SB 1520S 20 20 - 0,43 0,52 SB 1530S 30 30 - 0,43 0,52 SB 1540S 40 40 - 0,43 0,52 SB 1545S 45 45 - 0,43 0,52 SB 1550S 50 50 - 0,6 - SB 1560S 60 60 - 0,6 - SB 1590S 90 90 - 0,74 - SB 15100S 100 100 - 0,74 - Absolute Maximum Ratings Symbol Conditions Values Unit Ta = 25 °C, unless otherwise specified IFAV R-load, 4), Ta =50 °C 15 A IFRM f > 15 Hz, 4) 60 A IFSM half sinus-wave Ta =25 °C tp =10ms 320 A tp =8.3 ms A i2t Ta =25 °C tp =10ms 512 A²s tp =8.3 ms A²s Tj Operating junction temperature -50 ... +150 °C Tj DC forward (bypass) mode 5) -50 ... +200 °C Tstg Storage temperature -50 ... +175 °C Characteristics Symbol Conditions min. typ. max. Unit Ta = 25 °C, unless otherwise specified IR Tj =25 °C, VR = VRRM 500 µA IR Tj =100 °C, VR = VRRM 25 mA Cj at 1 MHz and applied reverse voltage of 4 V -pF ERSM L= 60 mH, Tj = 25 °C, inductive load switched off -mJ Rthja 4) -K/W RthjL 6) 4K/W |
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