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3N191_TO-78 데이터시트(PDF) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF ABSOLUTE MAXIMUM RATINGS 1@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW Continuous Power Dissipation (one side) 525mW MAXIMUM CURRENT Drain to Source 2 50mA MAXIMUM VOLTAGES Drain to Gate or Drain to Source 2 ‐30V Transient Gate to Source 2,3 ±125V Gate‐Gate Voltage ±80V 3N191 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVDSS Drain to Source Breakdown Voltage ‐40 ‐‐ ‐‐ V ID = ‐10µA BVSDS Source to Drain Breakdown Voltage ‐40 ‐‐ ‐‐ IS = ‐10µA, VBD = 0V VGS Gate to Source Voltage ‐3.0 ‐‐ ‐6.5 VDS = ‐15V, ID = ‐500µA VGS(th) Gate to Source Threshold Voltage ‐2.0 ‐‐ ‐5.0 VDS = ‐15V, ID = ‐500µA ‐2.0 ‐‐ ‐5.0 VDS = VGS , ID = ‐10µA IGSSR Gate Reverse Leakage Current ‐‐ ‐‐ 10 pA VGS = 40V IGSSF Forward Gate Leakage Current ‐‐ ‐‐ ‐10 VGS = ‐40V IDSS Drain to Source Leakage Current ‐‐ ‐‐ ‐200 VDS = ‐15V ISDS Source to Drain Leakage Current ‐‐ ‐‐ ‐400 VSD = ‐15V VDB = 0 ID(on) Drain Current “On” ‐5.0 ‐‐ ‐30 mA VDS = ‐15V, VGS = ‐10V rDS(on) Drain to Source “On” Resistance ‐‐ ‐‐ 300 Ω VDS = ‐20V, ID = ‐100µA gfs Forward Transconductance 4 1500 ‐‐ 4000 µS VDS = ‐15V, ID = ‐5mA , f = 1kHz Yos Output Admittance ‐‐ ‐‐ 300 Ciss Input Capacitance ‐‐ ‐‐ 4.5 pF VDS = ‐15V, ID = ‐5mA , f = 1MHz Crss Reverse Transfer Capacitance ‐‐ ‐‐ 1.0 Coss Output Capacitance ‐‐ ‐‐ 3.0 MATCHING CHARACTERISTICS 3N191 SYMBOL CHARACTERISTIC LIMITS UNITS CONDITIONS MIN MAX gfs1/gfs2 Forward Transconductance Ratio 0.85 1.0 ns VDS = ‐15V, ID = ‐500µA , f = kHz VGS1‐2 Gate Source Threshold Voltage Differential 5 ‐‐ 100 mV VDS = ‐15V, ID = ‐500µA ∆VGS1‐2/∆T Gate Source Threshold Voltage Differential Change with Temperature 5 ‐‐ 100 µV/°C VDS = ‐15V, ID = ‐500µA, TS = ‐55°C to +25°C VDS = ‐15V, ID = ‐500µA, TS = +25°C to +125°C SWITCHING CHARACTERISTICS SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS td(on) Turn On Delay Time ‐‐ ‐‐ 15 ns VDD = ‐15V, ID(on) = ‐5mA, RG = RL = 1.4KΩ tr Turn On Rise Time ‐‐ ‐‐ 30 toff Turn Off Time ‐‐ ‐‐ 50 The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet 3N191 P-CHANNEL MOSFET The 3N191 is a dual enhancement mode P-Channel Mosfet and is ideal for space constrained applications and those requiring tight electrical matching. The hermetically sealed TO-78 package is well suited for high reliability and harsh environment applications. (See Packaging Information). Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Device Schematic TO-78 (Bottom View) Available Packages: 3N191 in TO-72 3N191 in bare die. Please contact Micross for full package and die dimensions 3N191 Features: Very high Input Impedance High Gate Breakdown Voltage Low Capacitance Note 1 ‐ Absolute maximum ratings are limiting values above which 3N191 serviceability may be impaired. Note 2 – Per Transistor Note 3 – Approximately doubles for every 10 °C in TA Note 4 – Measured at end points, TA and TB Note 5 – Pulse: t= 300µS, Duty Cycle ≤ 3% |
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