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LS122_SOIC 데이터시트(PDF) 1 Page - Micross Components

부품명 LS122_SOIC
상세설명  MONOLITHIC DUAL NPN TRANSISTOR
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제조업체  MICROSS [Micross Components]
홈페이지  http://www.micross.com
Logo MICROSS - Micross Components

LS122_SOIC 데이터시트(HTML) 1 Page - Micross Components

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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
Direct Replacement for INTERSIL LS122 
HIGH  hFE @ LOW CURRENT ≥ 80 @ 10µA 
OUTPUT CAPACITANCE ≤ 2.0pF 
VBE tracking
≤ 20µV°C 
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +200°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
250mW 
Continuous Power Dissipation (Both sides) 
500mW 
Linear Derating factor (One side) 
2.3mW/°C 
Linear Derating factor (Both sides) 
4.3mW/°C 
Maximum Currents 
Collector Current 
10mA 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
|VBE1 – VBE2 
Base Emitter Voltage Differential 
‐‐ 
‐‐ 
mV 
I= 10µA, VCE = 5V 
∆|(VBE1 – VBE2)| / ∆T 
 
Base Emitter Voltage Differential 
Change with Temperature 
‐‐ 
‐‐ 
20 
µV/°C 
IC = 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
|IB1 – IB2 | 
Base Current Differential 
‐‐ 
‐‐ 
25 
nA 
IC = 10µA, VCE = 5V 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVCBO 
Collector to Base Voltage 
45 
‐‐ 
‐‐ 
IC = 10µA, IE = 0 
BVCEO 
Collector to Emitter Voltage 
45 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVEBO 
Emitter‐Base Breakdown Voltage 
6.2 
‐‐ 
‐‐ 
I= 10µA, I= 0
2 
BVCCO 
Collector to Collector Voltage 
60 
‐‐ 
‐‐ 
I= 10µA, I= 0 
hFE 
DC Current Gain 
80 
‐‐ 
‐‐ 
 
I= 10µA, VCE = 5V 
100 
‐‐ 
‐‐ 
 
I= 1.0mA, VCE = 5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐ 
‐‐ 
0.5 
I= 0.5mA, I= 0.05mA 
IEBO 
Emitter Cutoff Current 
‐‐ 
‐‐ 
nA 
I= 0, VEB = 3V 
ICBO 
Collector Cutoff Current 
‐‐ 
‐‐ 
nA 
I= 0, VCB = 45V 
COBO 
Output Capacitance 
‐‐ 
‐‐ 
pF 
I= 0, VCB = 5V 
CC1C2 
Collector to Collector Capacitance 
‐‐ 
‐‐ 
pF 
VCC = 0V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐ 
10 
nA 
VCC = ±60V 
fT 
Current Gain Bandwidth Product 
180 
‐‐ 
‐‐ 
MHz 
I= 1mA, VCE = 5V 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
dB 
I= 100µA,  VCE = 5V, BW=200Hz, RG= 10KΩ, 
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
LS122
MONOLITHIC DUAL
NPN TRANSISTOR
LS122 Features:
High hfe at low current
Tight matching
Tight VBE tracking
Low Output Capacitance
The LS122 is a monolithic pair of NPN transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The LS122 is a direct replacement for discontinued
Intersil IT122.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
Linear Systems replaces discontinued Intersil IT122
Available Packages:
LS122 in SOIC
LS122 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
SOIC (Top View)


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