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LS3550B_SOT-23 데이터시트(PDF) 1 Page - Micross Components

부품명 LS3550B_SOT-23
상세설명  MONOLITHIC DUAL NPN TRANSISTOR
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제조업체  MICROSS [Micross Components]
홈페이지  http://www.micross.com
Logo MICROSS - Micross Components

LS3550B_SOT-23 데이터시트(HTML) 1 Page - Micross Components

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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
EXCELLENT THERMAL TRACKING  ≤5µV/°C 
TIGHT VBE MATCHING 
|VBE1 – VBE2 |≤5mV 
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
TBD 
Maximum Currents 
Collector Current 
10mA 
Maximum Voltages 
Collector to Collector Voltage 
80V 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
|VBE1 – VBE2 
Base Emitter Voltage Differential 
‐‐ 
‐‐ 
mV 
I= ‐10mA, VCE = ‐5V 
∆|(VBE1 – VBE2)| / ∆T 
 
Base Emitter Voltage Differential 
Change with Temperature 
‐‐ 
‐‐ 
µV/°C 
I= ‐10mA, VCE = ‐5V 
TA = ‐40°C to +85°C 
|IB1 – IB2 
Base Current Differential 
‐‐ 
‐‐ 
10 
nA 
I= ‐10µA, VCE = ‐5V 
|∆ (IB1 – IB2)|/∆T 
Base Current Differential 
 Change with Temperature 
‐‐ 
‐‐ 
0.5 
nA/°C 
IC = ‐10µA, VCE = ‐5V 
TA = ‐40°C to +85°C 
hFE1 /hFE2 
DC Current Gain Differential 
‐‐ 
‐‐ 
10 
IC = 10µA, VCE = 5V 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVCBO 
Collector to Base Voltage ‐40 
‐‐ 
‐‐ 
IC = 10µA, IE = 0 
BVCEO 
Collector to Emitter Voltage ‐40 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVEBO 
Emitter‐Base Breakdown Voltage ‐6.2 
‐‐ 
‐‐ 
I= 10µA, I= 0
2 
BVCCO 
Collector to Collector Voltage ‐80 
‐‐ 
‐‐ 
I= 10µA, I= 0 
 
hFE 
 
DC Current Gain 
100 
‐‐ 
‐‐ 
 
I= ‐1mA, VCE = ‐5V 
80 
‐‐ 
‐‐ 
 
I= ‐10mA, VCE = ‐5V 
80 
‐‐ 
‐‐ 
 
I= ‐100mA, VCE = ‐5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐ 
‐‐ 
‐0.25 
I= ‐100mA, I= ‐10mA 
IEBO 
Emitter Cutoff Current 
‐‐ 
‐‐ 
‐0.2 
nA 
I= 0, VCB = ‐3V 
ICBO 
Collector Cutoff Current 
‐‐ 
‐‐ 
‐0.2 
nA 
I= 0, VCB = ‐30V 
COBO 
Output Capacitance 
‐‐ 
‐‐ 
pF 
I= 0, VCB = ‐10V 
CC1C2 
Collector to Collector Capacitance 
‐‐ 
‐‐ 
pF 
VCC = 0V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐ 
‐1 
nA 
VCC = ±80V 
fT 
Current Gain Bandwidth 
Product(Current) 
‐‐ 
‐‐ 
600 
MHz 
I= ‐1mA, VCE = ‐5V 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
dB 
I= ‐100µA,  VCE = ‐5V, BW=200Hz, RG= 10Ω,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
 
 
 
LS3550B
MONOLITHIC DUAL
PNP TRANSISTOR
LS3550B Features:
Tight matching
Low Output Capacitance
The LS3550B is a monolithic pair of PNP transistors
mounted in a single SOT-23 package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 6 Pin SOT-23 provides ease of manufacturing, and
a lower cost assembly option.
(See Packaging Information).
Linear Systems Monolithic Dual PNP Transistor
Available Packages:
LS3550B in SOT-23
LS3550B available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
SOT-23 (Top View)


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