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PZT949 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT949 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente PZT949 PNP Transistor Silicon Planar High Current Gain Transistor 18-Nov-2009 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 4 Top View 1 2 3 4 A M B D L K F G H J E C RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATION PZT949 is designed for general purpose switching and amplifier applications. FEATURES 6Amps continuous current, up to 20Amps pulse current Very low saturation voltage MARKING MAXIMUM RATINGS* (Tamb=25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current (DC) IC -5.5 A Collector Current (Pulse) ICM -20 A Total Power Dissipation PD 3 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C *The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches ELECTRICALCHARACTERISTICS (Tamb=25 °C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector - Base Breakdown Voltage BVCBO -50 - - V IC = -100 µA , I E = 0 Collector - Emitter Breakdown Voltage (With Real Device Limit) BVCER -50 - - V IC = -1 µA , RB≦1K Collector - Emitter Breakdown Voltage BVCEO -30 - - V IC = -10mA, IB = 0 Emitter - Base Breakdown Voltage BVEBO -6 - - V IE = -100 µA ,I C = 0 Collector Base Cut - Off Current ICBO - - -50 nA VCB = -40V, IE = 0 Collector Base Cut - Off Current (With Real Device Limit) ICER - - -50 nA VCB = -40V ,R≦1K Emitter Base Cut - Off Current IEBO - - -10 nA VEB = -6V, IC = 0 *VCE(sat)1 - - -75 mV IC = -0.5A, IB = -20 mA *VCE(sat)2 - - -140 mV IC = -1.0A, IB = -20 mA *VCE(sat)3 - - -270 mV IC = -2.0A, IB = -200 mA Collector - Emitter Saturation Voltage *VCE(sat)4 - - -440 mV IC = -5.5A, IB = -500 mA *VBE(sat) - - -1.25 V IC = -5.5A, IB = -500 mA Base - Emitter Voltage *VBE(on) - - -1.06 V VCE = -1V, IC = -5.5 A *hFE1 100 - - VCE = -1V, IC = -10 mA *hFE2 100 - 300 VCE = -1V, IC = -1 A *hFE3 75 - - VCE = -1V, IC = -5 A DC Current Gain *hFE4 - 35 - VCE = -2V, IC = -20 A Transition Frequency fT - 100 - MHz VCE = -10V, IC = -100mA, f = 50 MHz Collector Output Capacitance COB - 122 - pF VCB = -10 V, IE =0, f = 1 MHz Turn-on tON - 120 - nS Switching Time Turn-off tOFF - 130 - nS VCC = -10 V, IC = -4 A, IB1 = -IB2 = -400 mA *Measured under pulse condition. Pulse width = 300 µs, duty cycle ≦ 2%. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.30 6.70 G 0.02 0.10 B 6.70 7.30 H 1.50 2.00 C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K 0.85 1.05 E 4.60 REF. L 2.30 REF. F 0.60 0.80 M 2.90 3.10 SOT-223 9 4 9 = Date code |
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