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PZTA92 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 PZTA92
상세설명  Epitaxial Planar Transistor
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

PZTA92 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
PZTA92
PNP Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
The PZTA92 is designed for application as
a viedo output to drive color CRT, or as a
A 9 2
dialer circuit in electronics telephone.
Date Code
B
C
E
Description
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Parameter
Symbol
Min
Typ.
Max
Uni
Test Conditions
Collector-Base Breakdown Voltage
BVCBO
-
-
V
IC=-100µA,IE=0
IC=-1mA,IB=0
IE=-100µA,IC=0
VCB=-200V,IE=0
IC=-
VCE=- V, IC=-
VCE=- V, IC=- 10mA,f=100MHz
VCB=-20 , f=1MHz
BVCEO
-300
-
-
V
BVEBO
-
-
V
ICBO
-
-
-250
nA
-
VCE(sat)
-
hFE1
hFE2
fT
-
MH
Cob
-
pF
z
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
t
-300
-5
40
25
-900
-500
mV
20mA,IB=-2mA
10
1 mA
VCE=- V, IC=-
10
10 mA
20
V
C
-
25
-
50
6
-
-
Base Satruation Voltage
VBE(sat)
hFE3
mV
-
-
-
-
-
-
IC=- 20mA,IB=-2 mA
VCE=- V, IC=-
10
30 mA
o
IEBO
Emitter-Base Cutoff Current
VBE=-3 V
-
-
-100
nA
MAXIMUM RATINGS
Symbol
Parameter
Value
Collector Current
-5
2
55~+150
-300
-300
-500
IC
Tstg
TJ,
Junction and
Total Power Dissipation
VEBO
PD
Emitter-Base Voltage
V
mA
W
Storage Temperature
-
C
O
VCEO
Collector-Emitter Voltage
V
VCBO
Collector-Base Voltage
V
Units
ABSOLUTE
Ta=25C
o
5
1.40
1.80
Mi
llimeter
Mi
llimeter
SOT-223
01-Jun-2002 Rev. A
Page 1 of 2
REF.
Min.
Max.
REF.
Min.
Max.
A
6.70
7.30
B
13 C
TYP.
C
2.90
3.10
J
2.30 REF.
D
0.02
0.10
1
6.30
6.70
E
0 C
10 C
2
6.30
6.70
I
0.60
0.80
3
3.30
3.70
H
0.25
0.35
4
3.30
3.70


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