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IRF140SMD 데이터시트(PDF) 2 Page - Seme LAB |
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IRF140SMD 데이터시트(HTML) 2 Page - Seme LAB |
2 / 2 page IRF140SMD Prelim. 7/00 LAB SEME Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 13.9A VGS = 10V ID = 22A VDS = VGS ID = 250mA VDS ³ 15V IDS = 13.9A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 22A VDS = 0.5BVDSS ID = 22A VDS = 0.5BVDSS VDD = 50V ID = 22A RG = 9.1W IS = 22A TJ = 25°C VGS = 0 IF = 22A TJ = 25°C di / dt £ 100A/msVDD £ 50V ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain – Source On–State Resistance 1 Gate Threshold Voltage Forward Transconductance 1 Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate – Source Charge 1 Gate – Drain (“Miller”) Charge 1 Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Pulse Source Current 2 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time 100 0.13 0.077 0.125 24 9.1 25 250 100 –100 1660 550 120 30 59 2.4 12 12 30.7 21 145 64 105 22 88 1.5 400 2.9 Negligible 0.8 2.8 V V/°C W V S( W mA nA pF nC nC ns A V ns mC nH BVDSS DBVDSS DTJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS STATIC ELECTRICAL RATINGS Notes 1) Pulse Test: Pulse Width £ 300ms, d£ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) PACKAGE CHARACTERISTICS |
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