전자부품 데이터시트 검색엔진 |
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IRF9130 데이터시트(PDF) 2 Page - Seme LAB |
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IRF9130 데이터시트(HTML) 2 Page - Seme LAB |
2 / 2 page Parameter Test Conditions Min. Typ. Max. Unit Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain – Source On–State Resistance 1 Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Drain to Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Pulse Source Current 2 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time IRF9130 Prelim. 10/99 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk –100 –0.087 0.3 0.35 –2 –4 3 –25 –250 –100 100 12 860 350 125 15 29 1.0 7.1 2.0 21 60 140 140 140 –11 –50 –4.7 250 3.0 Negligible 5.0 13 1.67 0.12 30 VGS = 0 ID = –1mA Reference to 25°C ID = –1mA VGS = –10V ID = –7.0A VGS = –10V ID = –11A VDS = VGS ID = –250mA VDS ³ –15V IDS = –7.0A VGS = 0 VDS = 0.8 x Max TJ = 125°C VGS = –20V VGS = 20V VGS = 0 VDS = – 25V f = 1MHz VGS = –10V ID = –11A VDS = 0.5 x max VDD = –50V ID = –11A RG = 7.5W IS = –11A TJ = 25°C VGS = 0 IF = –11A VDD £ –50V di / dt £ –100A/ms TJ = 25°C ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) V V/ °C W V S ( É) mA nA pF nC ns A V ns mC nH °C/W BVDSS DBVDSS DTJ RDS(on) VGS(th) gfs IDSS IGSS IGSS CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS RqJC RqCS RqJA STATIC ELECTRICAL RATINGS Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) Thermal Resistance Junction – Case Thermal Resistance Case – Sink Thermal Resistance Junction – Ambient PACKAGE CHARACTERISTICS THERMAL CHARACTERISTICS |
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