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SSG4825P 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4825P 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SSG4825P -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET 31-Dec-2010 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS -30 - - V VGS= 0V, ID= -250μA Gate Threshold Voltage VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage Current IGSS - - ± 100 μA VDS= 0V, VGS= ±25V - - -1 μA VDS= -24V, VGS= 0V Zero Gate Voltage Drain Current IDSS - - -5 μA VDS= -24V, VGS= 0V, TJ= 55°C On-State Drain Current 1 ID(on) -50 - - A VDS= -5V, VGS= -10V - - 13 VGS= -10V, ID= -11.5A Drain-Source On-Resistance 1 RDS(ON) - - 19 mΩ VGS= -4.5V, ID= -9.3A Forward Transconductance 1 gfs - 29 - S VDS= -15V, ID= -11.5A Diode Forward Voltage VSD - -0.8 - V IS= 2.5A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 25 - Gate-Source Charge Qgs - 11 - Gate-Drain Charge Qgd - 17 - nC ID= -11.5A VDS= -15V VGS= -5V Input Capacitance Ciss - 2300 - Output Capacitance Coss - 600 - Reverse Transfer Capacitance Crss - 300 - pF VDS= -15V VGS= 0V f= 1MHz Turn-On Delay Time Td(on) - 15 - Rise Time Tr - 13 - Turn-Off Delay Time Td(off) - 100 - Fall Time Tf - 54 - nS VDD= -15V ID= -1A VGEN= -10V RL= 6Ω Notes: 1 Pulse test:PW ≦ 300 μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. |
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