SSG4932N datasheet(2/2 Pages) SECOS

부품명	SSG4932N

상세설명	Dual N-Channel Mode Power MOSFET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Elektronische Bauelemente

SSG4932N

10 A, 30 V, RDS(ON) 13.5 m

Dual N-Channel Mode Power MOSFET

31-Dec-2010 Rev. B

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

V(BR)DSS

100

-

V

VGS= 0V, ID= 250μA

Gate Threshold Voltage

VGS(th)

1

-

V

VDS= VGS, ID= 250μA

Gate-Body Leakage Current

IGSS

-

±100

nA

VDS= 0V, VGS= 12V

-

1

μA

VDS= 80V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-

25

μA

VDS= 80V, VGS= 0V, TJ= 55°C

On-State Drain Current

1

ID(on)

20

-

A

VDS= 5V, VGS= 10V

-

13.5

VGS= 4.5V, ID= 10A

Drain-Source On-Resistance

1

RDS(ON)

-

20

mΩ

VGS= 2.5V, ID= 8A

Forward Transconductance

1

gfs

-

40

-

S

VDS= 15V, ID= 10A

Diode Forward Voltage

VSD

-

0.7

-

V

IS= 2.3A, VGS= 0V

Dynamic

2

Total Gate Charge

Qg

-

20

-

Gate-Source Charge

Qgs

-

7.0

-

Gate-Drain Charge

Qgd

-

7.0

-

nC

ID= 10A

VDS= 15V

VGS= 5V

Switching

Turn-On Delay Time

Td(on)

-

20

-

Rise Time

Tr

-

9

-

Turn-Off Delay Time

Td(off)

-

70

-

Fall Time

Tf

-

20

-

nS

VDD= 25V

ID= 1A

VGEN= 10V

RL= 25Ω

Notes:

1.

Pulse test：PW ≦ 300

μs duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.

유사한 부품 번호 - SSG4932N

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