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SSY5829P 데이터시트(Datasheet) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSY5829P
상세내용  P-Channel Enhancement MOSFET With Schottky Diode
PDF  4 Pages
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제조사  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
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Elektronische Bauelemente
SSY5829P
-2.5 A, -20 V, RDS(ON) 0.110 
P-Channel Enhancement MOSFET
With Schottky Diode
14-Jan-2011 Rev. B
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
1206-8CF
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
RDS(on) and to ensure minimal power loss and
heat dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers,PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
1206-8CF saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
LeaderSize
1206-8CF
3K
7’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage (MOSFET)
VDS
-20
V
Reverse Voltage (Schottky)
VKA
20
V
Gate-Source Voltage (MOSFET)
VGS
±8
V
TA=25°C
-2.5
Continuous Drain Current(TJ=150°C )(MOSFET)
1
TA=70°C
ID
-1.9
A
Pulsed Drain Current (MOSFET)
2
IDM
-10
A
Continuous Source Current (MOSFET Diode Conduction)
1
IS
-1.6
A
Average Forward Current (Schottky)
IF
0.5
A
Pulse Forward Current (Schottky)
IFM
8
A
TA=25°C
2.1
Maximum Power Dissipation (MOSFET)
1
TA=70°C
1.1
TA=25°C
1.3
Maximum Power Dissipation (Schottky)
1
TA=70°C
PD
0.68
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Ratings
t≦5 sec
50
60
Maximum Junction to Ambient
1
Steady State
RθJA
90
110
°C/W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.00
2.10
M
0.08
0.25
B
3.00
3.05
a
1.70
1.73
C
3.00
3.05
b
0.24
0.35
D
0.65
0.70
L
0.20
0.40
E
1.95
2.00
L1
0
0.1
F
0.70
0.90



A
A
C
C
G
S
D
D




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