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STK15C88-NF45TR 데이터시트(PDF) 10 Page - Cypress Semiconductor |
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STK15C88-NF45TR 데이터시트(HTML) 10 Page - Cypress Semiconductor |
10 / 17 page STK15C88 Document Number: 001-50593 Rev. *C Page 10 of 17 SRAM Write Cycle Parameter Description 25 ns 45 ns Unit Min Max Min Max Cypress Parameter Alt tWC tAVAV Write Cycle Time 25 45 ns tPWE tWLWH, tWLEH Write Pulse Width 20 30 ns tSCE tELWH, tELEH Chip Enable To End of Write 20 30 ns tSD tDVWH, tDVEH Data Setup to End of Write 10 15 ns tHD tWHDX, tEHDX Data Hold After End of Write 0 0 ns tAW tAVWH, tAVEH Address Setup to End of Write 20 30 ns tSA tAVWL, tAVEL Address Setup to Start of Write 0 0 ns tHA tWHAX, tEHAX Address Hold After End of Write 0 0 ns tHZWE [7,8] tWLQZ Write Enable to Output Disable 10 15 ns tLZWE [7] tWHQX Output Active After End of Write 5 5 ns Switching Waveforms Figure 7. SRAM Write Cycle 1: WE Controlled [8] Figure 8. SRAM Write Cycle 2: CE Controlled [8] tWC tSCE tHA tAW tSA tPWE tSD tHD tHZWE tLZWE ADDRESS CE WE DATA IN DATA OUT DATA VALID HIGH IMPEDANCE PREVIOUS DATA tWC ADDRESS tSA tSCE tHA tAW tPWE tSD tHD CE WE DATA IN DATA OUT HIGH IMPEDANCE DATA VALID Notes 8. If WE is Low when CE goes Low, the outputs remain in the high impedance state. 9. CE or WE must be greater than VIH during address transitions. [+] Feedback |
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