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KF3N60I 데이터시트(PDF) 2 Page - KEC(Korea Electronics) |
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KF3N60I 데이터시트(HTML) 2 Page - KEC(Korea Electronics) |
2 / 6 page 2010. 12. 20 2/6 KF3N60D/I Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250㎂ , VGS=0V 600 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃ - 0.61 - V/ ℃ Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.15A - 2.8 3.3 Ω Dynamic Total Gate Charge Qg VDS=480V, ID=3A VGS=10V (Note4,5) - 8.5 - nC Gate-Source Charge Qgs - 1.8 - Gate-Drain Charge Qgd - 3.6 - Turn-on Delay time td(on) VDD=300V ID=3A RG=25Ω (Note4,5) - 25 - ns Turn-on Rise time tr - 25 - Turn-off Delay time td(off) - 40 - Turn-off Fall time tf - 20 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 355 - pF Output Capacitance Coss - 45 - Reverse Transfer Capacitance Crss - 4.4 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 3 A Pulsed Source Current ISP - - 12 Diode Forward Voltage VSD IS=2.3A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=3A, VGS=0V, dIs/dt=100A/ ㎲ - 300 - ns Reverse Recovery Charge Qrr - 1.5 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=24.5mH, IS=3A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤3A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 001 2 KF3N60 D 1 001 2 KF3N60 I 1 Marking |
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