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BDX54CG 데이터시트(PDF) 2 Page - ON Semiconductor |
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BDX54CG 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 7 page BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) http://onsemi.com 2 80 40 20 0 20 40 80 100 120 160 Figure 1. Power Derating T, TEMPERATURE ( °C) 60 TA TC 4.0 2.0 1.0 3.0 0 60 140 TA TC ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) BDX53B, BDX54B BDX53C, BDX54C VCEO(sus) 80 100 - - Vdc Collector Cutoff Current (VCE = 40 Vdc, IB = 0) BDX53B, BDX54B (VCE = 50 Vdc, IB = 0) BDX53C, BDX54C ICEO - - 0.5 0.5 mAdc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) BDX53B, BDX54B (VCB = 100 Vdc, IE = 0) BDX53C, BDX54C ICBO - - 0.2 0.2 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc) hFE 750 - - Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) VCE(sat) - - 2.0 4.0 Vdc Base-Emitter Saturation Voltage (IC = 3.0 Adc, IC = 12 mA) VBE(sat) - 2.5 Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 - - Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C BDX54B, 54C Cob - - 300 200 pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. |
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